DE SALVADOR DAVIDE

Contacts
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074e21882291bcdcefc5937f59e10b9c
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Structure Department of Physics and Astronomy
Telephone 0498277107
Qualification Professore associato confermato
Scientific sector FIS/03 - MATERIAL PHYSICS
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Proposals for thesis
Laser doping process for the development of gamma imaging devices

The creation of images of gamma sources is a rapidly expanding research sector thanks to the numerous applications in the medical, astrophysical and safety fields. The hyperpure germanium is among others the most interesting semiconductors for these applications, thanks to the high energy resolution (low gap) and the large volumes of interaction. However, the processes for obtaining segmented devices (with electrically separated electrical contacts) are not very efficient, mainly because the standard processes of microelectronics can degenerate the purity of the material (1 doping impurity over 10 ^ 12 atoms). The use of pulsed lasers to produce contact doping is an extremely promising technique thanks to the localized and short heating induced in the material. The aim of the thesis is to produce and characterize segmented hyperpure germanium detectors by laser technique. The student will follow the whole process from the ideation through simulations, to the realization of contacts through lithographic and laser processes, to the electronic characterization of the contacts and of the final device performances. The activity will be carried out in the DFA and Legnaro laboratories and represents a complete training opportunity in the world of semiconductor devices.

Curriculum Vitae
Born in 1972, he received the Degree in physics and the Ph.D. degree from Padova University in 1997 and 2001 respectively. From 2005 to 2014 he was researcher at Padova University. From 2014 he associate professor at Padova University where he teaches semiconductor physics for the Physics and Material Science master degrees. His research activities were devoted to experimental structural properties of semiconductor materials by exploiting X-ray and ion beam analysis techniques. Moreover, he maturated experience about simulation of experimental data by using continuum differential equation computing, that allows for the development and calibration of predictive physical models. This approach was fruitfully applied to many aspects of dopant and impurities diffusion, segregation and clustering in Si, Ge and III-V semiconductors. This research is strongly connected with micro and nano-electronic applications because it involves fundamental steps of devices fabrication. He also investigates the coherent interaction of accelerated beams with crystals for applications in accelerators physics and radiation production.
De Salvador coordinates the laboratory of diffraction at physics department and RBS-NRA-channeling analysis activities at national laboratories of Legnaro (LNL-INFN). De Salvador has authored more than 160 peer reviewed articles (H-index 23) and is referee of Physical Review Letters.

Research areas
1. Semiconductor doping processes for nanoelectronic applications (experiments and modelling)
2. Crystals microfabbrication for channeling of relativistic particles (fabrication and test beams).

Publications


Lecturer's Publications (PDF): 074E21882291BCDCEFC5937F59E10B9C.pdf

List of taught course units in A.Y. 2019/20
Degree course code (?) Degree course track Course unit code Course unit name Credits Year Period Lang. Teacher in charge
SC1158 COMMON SCO2045411 13 1st Year (2019/20) Annual ITA CINZIA SADA
SC1174 COMMON SCN1037879 10 1st Year (2019/20) First
semester
ITA CHIARA MAURIZIO
SC1174 COMMON SCP9087650 8 1st Year (2019/20) First
semester
ENG DAVIDE DE SALVADOR
SC2382 002PD SCP7081797 6 2nd Year (2019/20) First
semester
ENG DAVIDE DE SALVADOR